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| SMD Type High Performance Transistor FMMT455 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 140 Volt VCEO 1 Amp continuous current Ptot = 500 mW +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 160 140 5 2 1 200 500 -55 to +150 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter sustaining voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Static Forward Current Transfer Ratio Transition frequency Output capacitance * Pulse test: tp = 300 is; d 0.02. Symbol V(BR)CBO IC=100iA VCEO(sus) IC=10mA V(BR)EBO IE=100iA ICBO IEBO VCB=140V VEB=4V Testconditons Min 160 140 5 0.1 0.1 0.7 100 10 100 15 MHz pF 300 Typ Max Unit V V V iA iA V VCE(sat) IC=150mA,IB=15mA hFE fT Cobo IC=150mA,VCE=10V * IC=1A, VCE=10V* IC=50mA,VCE=10V,f=100MHz VCB=10V, IE=0, f=1MHz Marking Marking 455 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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